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| 36.0-43.0 GHz GaAs MMIC Buffer Amplifier April 2005 - Rev 01-Apr-05 B1002 Chip Device Layout Features High Dynamic Range/Postivie Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 24.0 dB Small Signal Gain 4.0 dB Noise Figure at Low Noise Bias +14 dBm P1dB Compression Point at Low Noise Bias 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband's four stage 36.0-43.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 24.0 dB with a noise figure of 4.0 dB across the band. Gain increases with frequency to compensate for other component roll-off factors common in 38.0-40.0 GHz systems. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 250 mA +0.3 VDC -8.0, -3.0 dBm -65 to +165 OC -55 to MTTF Table 3 MTTF Table 3 (3) Channel temperature affects a device's MTBF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (S21) Reverse Isolation (S12) Noise Figure (NF) Output Power for 1 dB Compression (P1dB) 1,2 Output Third Order Intercept Point (OIP3) 1,2 Drain Bias Voltage (Vd1,2) Gate Bias Voltage (Vg1,2) Supply Current (Id) (Vd=3.0V, Vg=-0.5V Typical) Units GHz dB dB dB dB dB dB dBm dBm VDC VDC mA Min. 36.0 -1.0 Typ. 8.0 8.0 24.0 +/-2.5 45.0 4.0 +14.0 +24.0 +3.0 -0.5 110 Max. 43.0 +5.5 0.0 220 (1) Optional power bias Vd1,2=5.5V, Id=220mA will typically yield 3-4 dB improved P1dB and OIP3. (2) Measured using constant current. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 36.0-43.0 GHz GaAs MMIC Buffer Amplifier April 2005 - Rev 01-Apr-05 B1002 Buffer Amplifier Measurements XB1002 Vd1,2=3.0 V Id1,2=110 mA 30 25 Gain (dB) XB1002 Vd1,2=3.0 V Id1,2=110 mA 0 Reverse Isolation (dB) Input Return Loss (dB) 20 15 10 5 0 -5 -10 -15 -20 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 20 Output Return Loss (dB) -10 -20 -30 -40 -50 -60 45.0 15 10 5 0 -5 -10 -15 -20 45.0 20 15 10 5 0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 Frequency (GHz) S21 Avg S12 Avg Frequency (GHz) S11 Avg S22 Avg XB1002 Vd1,2=3.0 V Id1,2=110 mA 5 4 Noise Figure (dB) Output Power at P1dB (dBm) XB1002 Vd1,2=3.0 V Id1,2=110 mA 18 17 16 15 14 13 12 11 10 9 8 35.0 37.0 39.0 41.0 43.0 45.0 3 2 1 0 35.0 36.0 37.0 38.0 39.0 40.0 Frequency (GHz) Frequency (GHz) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 36.0-43.0 GHz GaAs MMIC Buffer Amplifier April 2005 - Rev 01-Apr-05 B1002 1.150 (0.045) 2 Mechanical Drawing 1.500 (0.059) 1.750 (0.069) 3 0.750 (0.030) 1 4 0.750 (0.030) 0.0 0.0 6 5 1.150 (0.045) 1.750 (0.069) 2.900 (0.114) (Note: Engineering designator is 38BSA_01B1) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All Bond Pads are 0.100 x 0.100 (0.004 x 0.004). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 2.691 mg. Bond Pad #1 (RF In) Bond Pad #2 (Vd1) Bond Pad #3 (Vd2) Bond Pad #4 (RF Out) Bond Pad #5 (Vg2) Bond Pad #6 (Vg1) Bias Arrangement Vd1,2 Bypass Capacitors - See App Note [2] 2 3 RF In 1 4 RF Out XB1002 RF In RF Out 6 5 Vg1,2 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 36.0-43.0 GHz GaAs MMIC Buffer Amplifier April 2005 - Rev 01-Apr-05 B1002 App Note [1] Biasing - As shown in the bonding diagram, this device can be operated with all four stages in parallel, and can be biased for low noise performance or high power performance. Low noise bias is nominally Vd=3V, Id=110mA. More controlled performance will be obtained by separately biasing Vd1 and Vd2 each at 3.0V, 55mA. Power bias may be as high as Vd=5.5V, Id=220mA with all stages in parallel, or most controlled performance will be obtained by separately biasing Vd1 and Vd2 each at 5.5V, 110mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pf ) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias (Recommended for Saturated Applications) -- Each DC pad (Vd1,2 and Vg1,2) needs to have DC bypass capacitance (~100-200 pf ) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF Tables These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature 78 deg Celsius 98 deg Celsius 118 deg Celsius Rth MTTF Hours FITs 68.1 C/W - 8.34E+11 4.99E+10 3.99E+09 1.20E-03 2.00E-02 2.51E-01 Bias Conditions: Vd1=Vd2=3.0V, Id1=55 mA, Id2=55 mA Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature 137 deg Celsius 157 deg Celsius 177 deg Celsius Rth MTTF Hours FITs 66.3 C/W - 6.32E+08 7.70E+07 1.13E+07 1.58E+00 1.30E+01 8.84E+01 Bias Conditions: Vd1=Vd2=5.5V, Id1=110 mA, Id2=110 mA Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 36.0-43.0 GHz GaAs MMIC Buffer Amplifier April 2005 - Rev 01-Apr-05 B1002 Device Schematic Vd1 R=5.0 R=5.0 R=5.0 Vd2 R=5.0 R=5.0 RFin R=5.0 R=5.0 RFout R=20.0 R=20.0 R=20.0 R=20.0 R=30.0 Vg1 R=30.0 R=30.0 Vg2 R=30.0 Typical Application XU1001 WG Sideband Reject XB1002 XP1001 IF IN 2 GHz RF Out 37.0-39.5 GHz LO(+15dBm) 17.5-18.75 GHz (USB Operation) 19.5-20.75 GHz (LSB Operation) On-Chip Temp Comp Detector Mimix Broadband MMIC-based 36.0-40.0 GHz Transmitter Block Diagram (Changing LO and IF frequencies as required allows design to operate as high as 40 GHz) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 36.0-43.0 GHz GaAs MMIC Buffer Amplifier April 2005 - Rev 01-Apr-05 B1002 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C + 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 6 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. |
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